Translated data: Samsung Electronics has confirmed that its fifth-generation high-bandwidth memory HBM3E is codenamed Shinebolt. Shinebolt boasts a maximum data transfer speed about 50% faster than HBM3, reaching 1.228TB/s, and will provide robust support for next-generation AI chips. Samsung is accelerating the development and mass production of Shinebolt to catch up with industry leader SK Hynix and expand HBM capacity to meet customized customer demands. Prototypes of Shinebolt have been sent to customers for testing, with a 12-layer stacked 36GB product currently in development. HBM3e is considered the next-generation DRAM, holding significant importance in the AI era.